Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2
نویسندگان
چکیده
Copyright This work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/
منابع مشابه
Erratum: Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2
Recent progress in the synthesis of monolayer MoS2, a two-dimensional direct band-gap semiconductor, is paving new pathways toward atomically thin electronics. Despite the large amount of literature, fundamental gaps remain in understanding electronic properties at the nanoscale. Here, we report a study of highly crystalline islands of MoS2 grown via a refined chemical vapor deposition synthesi...
متن کاملInvestigating the Longitudinal Optical Conductivity in Three-Layer Graphene Systems with Composes Mono-Bi-Bi and Bi-Mono-Bi and Bi-Bi-Mono
The longitudinal optical conductivity is the most important property for graphene-baseddevices. So investigating this property for spatially separated few-layer graphene systems analytically and numerically is the main purpose of our study. Each layer can be mono- or bi-layer graphene. The density-density correlation function has been screened by the dielectric function using the random p...
متن کاملMono-Mono-Mono and Bi-Bi-Bi three-layer graphene systems’ optical conductivity
Investigating the longitudinal optical conductivity of graphene systems, which is the mostimportant property for opto-electronic devices, for three-layer graphene systems theoretically and numerically is the main purpose of this study. Each layer can be mono- or bi-layer graphene. Separation between layers has been denoted by d, selected to be about ten nanometers. The carrier densities i...
متن کاملThickness-dependent mobility in two-dimensional MoS₂ transistors.
Two-dimensional (2D) semiconductors such as mono and few-layer molybdenum disulphide (MoS2) are very promising for integration in future electronics as they represent the ultimate miniaturization limit in the vertical direction. While monolayer MoS2 attracted considerable attention due to its broken inversion symmetry, spin/valley coupling and the presence of a direct band gap, few-layer MoS2 r...
متن کاملModulation of electronic properties from stacking orders and spin-orbit coupling for 3R-type MoS2.
Two-dimensional crystals stacked by van der Waals coupling, such as twisted graphene and coupled graphene-BN layers with unusual phenomena have been a focus of research recently. As a typical representative, with the modulation of structural symmetry, stacking orders and spin-orbit coupling, transitional metal dichalcogenides have shown a lot of fascinating properties. Here we reveal the effect...
متن کامل